View TH7887A_1972552.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1 features ? 1024 x 1024 pixels with memory zone up to 60 images/second built-in antiblooming device providing an electronic shutter function pixel: 14 mx14 m image zone: 14.34 x 14.34 mm2 four outputs (256 x 1024 pixels) at 20 mhz each possible binning 2 x 2 optical shield against parasitic reflexions and stray light a/r window in 400 - 700 nm bandwidth description the TH7887A is especially designed for high data rate applications (up to 60 pict/s) in medical and industrial fields. this area array image sensor consists of a 1024 x 1024 pixels (14 mx14 m) image zone associated to a memory zone (masked with optical shield). in order to increase data rate, the image zone is divided into four zones (256 x 1024 each) which are read in parallel through 4 different outputs (readout frequency up to 20 mhz/output leading to a total readout frequency of 80 mhz). the TH7887A is designed with antiblooming gates. moreover, the 2 x 2 binning mode is available on this sensor. in this case, the image size is 512 x 512 with 28 mx28 m pixels. each output will read 128 x 512 pixels. the TH7887A is sealed with a specific anti-reflective window optimized in 400 - 700 nm bandwidth. area array ccd image sensor 1024 x 1024 pixels with antiblooming TH7887A rev. 2146a?image?05/02
2 TH7887A 2146a?image?05/02 figure 1. TH7887A organization image zone 1, 2, 3, 4 1, 2, 3, 4 m p a va l 1,2 m vgs r vdd1 vs1 vdd2 vs2 vdd3 vs3 vdd4 vs4 vos1 vos2 vos3 vos4 memory zone 1024 x 1024 1024 x 1024
3 TH7887A 2146a ? image ? 05/02 pin identification pin number symbol designation a2, a6 (1) p4 image zone clocks b2, c5 (1) p3 b5, c3 (1) p2 a5, c2 (1) p1 a3, a7 (1) m1 memory zone clocks b7, c4 (1) m2 b4, c6 (1) m3 c7, a4 (1) m4 v7 m memory to register clock w8 l1 readout register clocks v8 l2 v2 vdd1 output amplifier drain supply v3 vdd2 v4 vdd3 v5 vdd4 w2 vs1 output amplifier source supply w3 vs2 w4 vs3 w5 vs4 aa6 vddp screen voltage aa5 nc not connected v6 vgs register output gate bias top view index vss vos2 vos1 vos3 vos4 r l1 vss vdr vs4 vs3 vs2 vs1 vss l2 m vgs vdd4 vdd3 vdd2 vdd1 vss a m4 m3 p3 p2 p1 va vss m2 m2 vss p2 m3 vss p3 vss ? vss m1 p4 p1 m4 m1 p4 vss aa w v c b a a1 87654321 vddp n.c
4 TH7887A 2146a ? image ? 05/02 note: 1. short circuited on package. aa1 vos1 video output signal aa2 vos2 aa3 vos3 aa4 vos4 aa8 r reset clock c8 a antiblooming gate clock w6 vdr reset bias c1 va antiblooming diode bias aa7, v1, w1 vss substrate bias w7, a8, b8 vss b6, b1, a1, b3 vss pin number symbol designation
5 TH7887A 2146a ? image ? 05/02 geometrical characteristics the image zone features 1024 useful lines (+ 20 extra lines) of 1024 pixels. for readout only, the full frame is split into 4 blocks of 256 columns. the video line consists of 256 useful pixels, and 273 elements in total (for each output). figure 2. video line (on each output) 7 dark reference lines 3 isolation lines 1044 line 6 dark reference lines 3 isolation lines first pixel 1 inactive line vos1 vos2 vos3 vos4 1044 lin e memory zone 1024 useful pixels image zone pixels 1 to 17 : inactive prescan elements pixels 18 to 273 : useful elements
6 TH7887A 2146a ? image ? 05/02 figure 3. pixel layout figure 4. cross-section aa ? a a' aperture 10.3 m va va p1 a a a a p2 p3 p4 p1 14 m 14 m transfer direction potential profile signal charge 14 m during integration time for one pixel p1 p2 p3 p4 p1
7 TH7887A 2146a ? image ? 05/02 absolute maximum ratings* operating range the operating range defines the limits where function is guaranteed. electrical limits of applied signals are given in the operating conditions section. operating precautions shorting the video outputs to any other pin, even temporarily, can permanently damage the on-chip output amplifier. operating conditions storage temperature .................................... -55 cto+150 c *notice: stresses above those listed under absolute max- imum ratings may cause permanent device fail- ure. functionality at or above these limits is not implied. exposure to absolute maximum ratings for extended periods may affect device reliability. operating temperature ............................... -40 cto+85 c thermal cycling.........................................................15 c/mm maximum applied voltages: a2, a6, b2, c5, b5, c3, a5, c2, a3, a7, b7, c4 b4, c6, c7, a4, v7, w8, v8, aa8, v6, aa5..........-0.3v to 15v v2,v3,v4,v5,w2,w3,w4,w5 w6, c1, aa6 ......................................................-0.3v to 15.5v c8 ......................................................................... -0.3v to 12v aa7, v1, w1, w7, a8, b8, b6, b1, a1, b3 ............. ground 0v table 1 . dc characteristics parameter symbol value unit min typ max output amplifier drain supply vdd1, vdd2, vdd3, vdd4 14.5 15 15.5 v screen voltage vddp 14.5 15 15.5 v reset bias vdr 14.5 15 15.5 v antiblooming diode bias va 14.5 15 15.5 v register output gate bias vgs 2.2 2.5 2.8 v output amplifier source supply vs1,2,3,4 ? 0 ? v ground vss ? 0 ? v
8 TH7887A 2146a ? image ? 05/02 timing diagram the following diagrams are given for: 20 mhz readout frequency 1.25 mhz vertical transfer frequency readout of one image is performed in 2 steps: image zone to memory zone transfer memory zone to register transfer and readout of register this last step is also an integration period, the duration of which can also be increased according to the required frame rates. figure 5. frame timing diagram image to memory zone transfer picture readout integration period 15 1044 see fig. 7 see fig. 6 = m 1044 pulses 15 1044 memory zone cleaning period (*) (*) during the cleaning period, memory clocks must be pulsed as during readout time (specially for high temperature applications). p1 m1 m2 m3 m4 l1 l2 r a p2 p3 p4
9 TH7887A 2146a ? image ? 05/02 figure 6. line timing diagram figure 7. vertical transfer during image to memory zone transfer 1 17 18 273 min 1 17 1 1 : 17 inactive pre-scan elements 2 : 256 useful video pixels 1 2 100 ns min. 100 ns min. see fig. 9 5to 3to 7to 3to 3to 5to 3to item fig.8 = m m1 m2 m3 m4 l1 l2 r vos 1,2,3,4 1 2 1044 100 ns min. 100 ns min. see fig. 8 20 ns < tr < 2 to 20 ns < tf < 2 to = m p1 p2 m1 m2 m3 m4 a p3 p4
10 TH7887A 2146a ? image ? 05/02 figure 8. transfer period from image zone to memory zone ( pand m) for 1.25 mhz vertical transfer frequency (fv = 1/tv) figure 9. output diagram for readout register and reset clock 20 mhz applications cross over of complementary clocks ( l1, l2) between 30% and 70% of maximum amplitude. tv=800 ns 5 to 3 to 5 to 3 to 5 to to = tv / 8 3 to tr tf 25 ns < tr < to/3 25 ns < tf < to/3 to = 100 ns = m1 p1 = m2 p2 = m3 p3 = m4 p4 50 ns t2 t2 t1 12 ns min t1 16 ns min 16 ns min reset feedthrough t1 = 10 ns typ. t2 = 5 ns typ. td = 8 ns typical delay time signal level td td a 0.3a l1 r vos 1,2,3,4 l2
11 TH7887A 2146a ? image ? 05/02 binning mode operation in this mode, the image is composed of 512 x 512 pixels (28 mx28 m each). figure 10. summation in the readout register of 2 adjacent lines. figure 11. summation of 2 adjacent pixels in binning mode operation maximum level of elementary pixel (14 x 14 m) is reduced to vsat/4. 100 ns min 100 ns min 15 to 5to 3to 5to 5to 3to 5to 3to 5to 3to 3t0 3to 3to 5to 3to fall times and rise times: see figures 8 & 9 = m1 m1 m2 m1 m3 m l1 l2 useful signal output reset frequency pixel i divided by 2 pixel i pixel i+1 + l1 r vos 1,2,3,4 l2
12 TH7887A 2146a ? image ? 05/02 exposure time reduction the TH7887A allows exposure time control (electronic shutter function). the exposure time reduction is achieved by pulsing all the pi gates to 0v to continu- ously remove all photogenerated electrons through antiblooming drain va. figure 12. timing diagram for electronic shutter transfer obturation integration image period 1 s 1 s fall times and rise times: see figures 7 & 8 p1 a p2 p3 p4 table 2 . drive clock characteristics parameter symbol value unit remarks min typ max image zone clocks high level low level p1,2,3,4 8.5 0 9 0.5 9.5 0.8 v v typical input capacitance 15 nf see figure 13 memory zone clocks high level low level m1,2,3,4 8.5 0 9 0.5 9.5 0.8 v v typical input capacitance 15.5 nf see figure 13 memory to register clocks high level low level m 8.5 0 9 0.5 9.5 0.8 v v typical input capacitance 10 nf antiblooming gate high level (integration) low level (transfer) a 5.5 0 5.5 0.5 5.5 0.8 v v typical input capacitance 14 nf see figure 13 and figure 15
13 TH7887A 2146a ? image ? 05/02 figure 13. capacitance network for drive clocks reset gate high level low level r 10 0 11 0.5 12 0.8 v v typical input capacitance 10 pf readout register clocks high level low level l1, 2 8.5 0 9 0.5 9.5 0.8 v v maximum readout register frequency f h ? 20 23 mhz see figure 9 image zone to memory zone transfer frequency f v ? 1.25 1.7 mhz see figure 14 table 2 . drive clock characteristics (continued) parameter symbol value unit remarks min typ max 60 pf 75 pf 50 pf l1 l2 2.5 nf 1.4 nf 3.2 nf 4.9 nf 2.2 nf 3.3 nf 3.4 nf 2.5 nf p1 p2 p3 p4 p1 p2 2.2 nf 4.4 nf 4.4 nf 4.4 nf 3.4 nf p4 p3 3.9 nf 4.4 nf 3.2 nf m1 m2 3.2 nf 4.4 nf 4.4 nf 4.4 nf 3.9 nf m4 m3 a 0.5 nf 0.7 nf 1.3 nf 0.7 nf 0.5 nf p1 p2 p3 p4 a va
14 TH7887A 2146a ? image ? 05/02 electrical performances electro-optical performances general test conditions: ? to p = 2 5 c (package back temperature). ? light source: 2854k with 2 mm bg38 filter (unless specified) + f/3.5 optical aperture. ? 60 images per second mode (unless specified). ? typical operating conditions. readout on each output. measurements exclude dummy elements and blemishes. table 3 . static and dynamic electrical characteritics parameter symbol value unit remarks min typ max output amplier supply current i dd ? 8.5 ? ma per amplifier output impedance z s 200 225 250 ? dc output level v ref ? 11.5 ? v output conversion factor cvf 7.8 8 8.2 v/ e- table 4 . electro-optical performance characteristics parameter symbol value unit remarks min typ max saturation output level v sat 1.6 2 2.4 v (1) responsivity at 640 nm responsivity with bg38 filter r 7 ? 8 12 ? ? v/j/cm 2 mv/lux quantum efficiency at 640 nm qe ? 14 ? % see figure 17 gain dispersion between outputs ? g ? 12% photo response non-uniformity (1 ) prnu ? 1.3 1.7 % vos dark signal non-uniformity (1 )dsnu ? 0.14 0.2 mv (2) average dark signal v ds ? ? 1 2 1.5 2.8 mv mv (3) (4) temporal rms noise in darkness (last line) v n ? 200 ? v (5) dynamic range d ? 80 ? db (6)
15 TH7887A 2146a ? image ? 05/02 notes: 1. pixel saturation (full well) as a function of vertical transfer frequency (see figure 14) and antiblooming adjustment (see fig- ure 15). 2. after subtraction of dark signal slope due to memory readout time. 3. first line level referenced from inactive prescan elements (17 samples). 4. last line level referenced from inactive prescan elements(17 samples). 5. measured with correlated double sampling (cds) including 160 v readout noise and dark current noise in the general test conditions. 6. saturation to rms noise in darkness ratio. 7. at nyquist frequency. 8. vsat/2 measurement and 1.25 mhz vertical transfer frequency. 9. vsat/2 measurement and 20 mhz horizontal transfer frequency. figure 14. saturation level by full well with antiblooming out ( ahigh=0v) vs the vertical transfer frequency horizontal modulation transfer function at 500 nm mtf ? 70 ? % (7) vertical charge transfer inefficiency vcti ?? 2.10 -5 (8) horizontal charge transfer inefficiency hcti ?? 7.10 -5 (9) table 4 . electro-optical performance characteristics (continued) parameter symbol value unit remarks min typ max 0 200 vertical transfer frequency (khz) saturation output level (volts) 1200 700 1700 1 0.5 1.5 2 2.5 3 3.5 readout stage limit
16 TH7887A 2146a ? image ? 05/02 figure 15. saturation level limitation by the antiblooming effect on the pixel figure 16. smearing effect 0 234 56 a high clock level (volts) saturation output level (volts) 789 1 0.5 1.5 2 2.5 3 readout stage limit inefficient antiblooming efficient antiblooming 1.2 mhz vertical transfer frequency 0 0123456 overilluminated zone (% image height) smearing/vsat (%) 78910 40 20 60 80 100 60 images / sec. 1.2 mhz vertical tranfer frequency 100xesat a smearing level a,b signal line vertical smearing overillumination b 10xesat
17 TH7887A 2146a ? image ? 05/02 figure 17. spectral response image quality grade blemish max area of 2 x 2 defective pixels. clusters less than 7 contiguous defects in a column. columns more than 7 contiguous defects in a column. general measurement conditions note: 1. reference is vo : average darkness signal 0 400 450 500 550 600 650 700 lambda (mm) quantum efficiency (%) 750 800 850 900 950 1000 1050 1100 5 10 15 20 room temperature 25 c frequency 60 images/second typical operating conditions considered image zone 1024 x 1024 light source 2854 k with bg38 filter + f/3.5 optical aperture ta ble 5. at v os =0.7vsat. type white black blemishes/clusters >20%vos s > 30% vos columns > 10% vos > 10% vos ta ble 6. in darkness, t = 25 c, 60 images/second blemishes/clusters >10mv (1) columns >5mv (1)
18 TH7887A 2146a ? image ? 05/02 number of defects : amplitude of video signal of defect with respect to mean output voltage vos ordering code TH7887Avrh total pixel number affected by blemishes and clusters 100 maximum number of clusters 10 maximum number of columns 5
19 TH7887A 2146a ? image ? 05/02 outline drawing top view 1 2 3 4 5 6 7 8 aa w v c b a 2.54 typ 40.64 all values in mm photosensitive area glass window thickness: 1.5 0.1 mm (antireflective coating with 400 - 700 nm transmission: 99%) a1 index optical shield reference for first pixel position optical distance between photosensitive area and - external face of the window: 1.93 0.30 mm - back side of the package: 1.71 0.15 mm metal plate connected to vss parallelism between ccd and back side has a maximum value of 100 m bottom view 2.2 0.04 32.2 5 14.25 2.54 0.46 x = 0.45 0.10 y = 7.17 0.10 36.6 4.6 3.64 0.40 1.060.1 x y 28.5 33.5 55.88
42.5 1 .75 2.54 0.25 25 tolerance unless specified 1% 0.51 2.2 0.05 1st useful pixel - readout through vos1

printed on recycled paper. ? atmel corporation 2002. atmel corporation makes no warranty for the use of its products, other than those expressly contained in the company ? s standard warranty whichisdetailedinatmel ? s terms and conditions located on the company ? s web site. the company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. no licenses to patents or other intellectual property of atmel are granted by the company in connection with the sale of atmel products, expressly or by implication. atmel ? s products are not authorized for use as critical components in life support devices or systems. atmel headquarters atmel operations corporate headquarters 2325 orchard parkway san jose, ca 95131 tel 1(408) 441-0311 fax 1(408) 487-2600 europe atmel sarl route des arsenaux 41 case postale 80 ch-1705 fribourg switzerland tel (41) 26-426-5555 fax (41) 26-426-5500 asia atmel asia, ltd. room 1219 chinachem golden plaza 77 mody road tsimhatsui east kowloon hong kong tel (852) 2721-9778 fax (852) 2722-1369 japan atmel japan k.k. 9f, tonetsu shinkawa bldg. 1-24-8 shinkawa chuo-ku, tokyo 104-0033 japan tel (81) 3-3523-3551 fax (81) 3-3523-7581 memory atmel corporate 2325 orchard parkway san jose, ca 95131 tel 1(408) 441-0311 fax 1(408) 436-4314 microcontrollers atmel corporate 2325 orchard parkway san jose, ca 95131 tel 1(408) 441-0311 fax 1(408) 436-4314 atmel nantes la chantrerie bp 70602 44306 nantes cedex 3, france tel (33) 2-40-18-18-18 fax (33) 2-40-18-19-60 asic/assp/smart cards atmel rousset zone industrielle 13106 rousset cedex, france tel (33) 4-42-53-60-00 fax (33) 4-42-53-60-01 atmel colorado springs 1150 east cheyenne mtn. blvd. colorado springs, co 80906 tel 1(719) 576-3300 fax 1(719) 540-1759 atmel smart card ics scottish enterprise technology park maxwell building east kilbride g75 0qr, scotland tel (44) 1355-803-000 fax (44) 1355-242-743 rf/automotive atmel heilbronn theresienstrasse 2 postfach 3535 74025 heilbronn, germany tel (49) 71-31-67-0 fax (49) 71-31-67-2340 atmel colorado springs 1150 east cheyenne mtn. blvd. colorado springs, co 80906 tel 1(719) 576-3300 fax 1(719) 540-1759 biometrics/imaging/hi-rel mpu/ high speed converters/rf datacom atmel grenoble avenue de rochepleine bp 123 38521 saint-egreve cedex, france tel (33) 4-76-58-30-00 fax (33) 4-76-58-34-80 e-mail literature@atmel.com web site http://www.atmel.com 2146a ? image ? 05/02 0m at m e l ? is the trademarks of atmel. other terms and product names may be the trademarks of others.

▲Up To Search▲

Price & Availability of TH7887A

	To Download TH7887A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .